| OUT OF STOCK (0 local - 0 remote) |
1TB Samsung 980 PRO M.2 Solid State Drive
| IN STOCK |
1TB Samsung 970 EVO Plus M.2 Internal Solid State Drive
| IN STOCK |
1TB Samsung 870 EVO 2.5-Inch Internal Solid State Drive
| IN STOCK |
8TB Samsung 2.5-inch Serial ATA V-NAND MLC Internal Solid State Drive
| IN STOCK |
4TB Kingston Technology FURY Renegade M.2 PCI Express 4.0 Solid State Drive
| IN STOCK |
8TB Samsung 870 QVO 2.5-inch Serial ATA III V-NAND MLC Internal Solid State Drive
| IN STOCK |
500GB Samsung 980 M.2 PCI Express 3.0 V-NAND NVMe Internal Solid State Drive
| IN STOCK |
2TB Samsung 970 EVO Plus M.2 Internal Solid State Drive
| IN STOCK |
1TB Transcend M.2 2280 PCIe Gen4 x4 NVMe SSD 240S
| IN STOCK |
1TB Kingston Technology KC3000 M.2 PCI Express 4.0 Solid State Drive
| IN STOCK |
1TB Samsung 870 QVO 1TB 2.5 SATA III 2.5-inch Serial ATA III V-NAND Internal Solid State Drive
| IN STOCK |
1TB VisionTek 2.5-Inch Serial ATA III TLC Internal Solid State Drive
| IN STOCK |
1TB Samsung 870 QVO 2.5-inch Serial ATA III V-NAND MLC Solid State Drive
| IN STOCK |
500GB Crucial P3 M.2 PCI Express 3.0 3D NAND NVMe Internal Solid State Drive
| IN STOCK |
512GB Gigabyte M.2 PCI Express 3.0 NVMe Internal Solid State Drive
| IN STOCK |
What is 3D V-NAND and how does it differ from existing technology?
Samsung’s unique and innovative 3D V-NAND flash memory architecture is a breakthrough in overcoming the density limitations, performance and endurance of today’s conventional planar NAND architecture. 3D V-NAND is fabricated by stacking 32 cell layers vertically over one another rather than decreasing the cells dimensions and trying to fit itself onto a fixed horizontal space resulting in higher density and better performance utilizing a smaller footprint.
2TB Samsung 850 EVO 2.5-inch SSD with SATA 6Gb/s connection. Lots of enhanced features including V-Nand Technology, TurboWrite and blazing fast speed up to 540MB/sec read and 520MB/sec write speed. AES 256-bit encryption and backed by a 5-year warranty.
Optimize daily computing with TurboWrite technology for unrivalled read/write speeds
Achieve the ultimate read/write performance to maximize your everyday computing experience with Samsung’s TurboWrite technology. You not only obtain more than a 10% better user experience than 840 EVO* but up to 1.9x faster random write speeds for 120/250 GB models** as well. The 850EVO delivers the top of its class performance in sequential read (540MB/s) and write (520MB/s) speeds. Plus, you also gain optimized random performance in all QD for client PC usage scenario.
Get into the fast lane with the improved RAPID mode
Samsung’s Magician software which provides Rapid Mode for 2x faster processing data speeds* on a system level by utilizing unused PC memory (DRAM) as cache storage. The newest Magician increased the maximum memory usage in Rapid mode from 1 GB, in the previous 840 EVO version, to up to 4 GB with the 850 EVO when implementing 16 GB of DRAM. You also get a 2x performance* boost in all random Queue depth.
Secure valuable data through advanced AES 256 encryption
The 850 EVO comes fortified with the latest hardware-based full disk encryption engine. The AES 256 encryption-bit security technology secures data without any performance degradation and complies with TCG Opal 2.0. It is also compatible with Microsoft e-drive IEEE1667 so your data is protected at all times for your peace of mind.
Protect against overheating with a highly responsive Dynamic Thermal Guard
The 850 EVO’s Dynamic Thermal Guard constantly monitors and maintains ideal temperatures for the drive to operate in optimal conditions for the integrity of your data. When temperatures rise above an optimal threshold, the Thermal Guard automatically throttles temperatures down protecting your data while maintaining responsiveness to ensure your computer is always safe from overheating.
| CAPACITY | 2TB |
| INTERFACE TYPE | SATA III 6Gb/s |
| FORM FACTOR | 2.5-inch form factor |
| DEVICE TYPE | SSD Solid State Disk |
| DATA TRANSFER RATES | Sequential Read Speed: Up to 540MB/s Sequential Write Speed: Up to 520MB/s 4KB Random Read: 97,000 IOPS 4KB Random Write: 88,000 IOPS |
| FLASH STORAGE DETAILS | Samsung 32 layer 3D V-NAND, Samsung MGX controller |
| OPERATING TEMPERATURE | Operating temperature: 0°C - 70°C Non-operating temperature: -40°C - 84°C |
| MTBF | 1.5 million hours |
| SPECIAL FEATURES | AES 256-bit Full Disk Encryption (FDE) TCG/Opal v2.0, Encrypted Drive (IEEE1667) |
| DIMENSIONS | 100 x 69.85 x 6.8 (mm) |
| WEIGHT | 66g |
| PACKAGING | Retail packaging |
| WARRANTY | 5 years limited manufacturers warranty |